ICS29.045 H80/84 团体标准 T/IAWBS005-2018 6英寸碳化硅单晶抛光片 6inchpolishedmonocrystallinesiliconcarbidewafers 2018-12-06发布 中关村天合宽禁带半导体技术创新联盟发布 2018-12-17实施T/IAWBS005—2018 I目次 前  言............................................................................................................................................II 1范围.................................................................................................................................................1 2规范性引用文件.............................................................................................................................1 3术语和定义.....................................................................................................................................1 3.1相变裂纹CracksInducedbyPolytypeTransformation..................................................1 3.2基平面位错BasalPlaneDislocation（BPD）.................................................................2 3.3螺位错ThreadingScrewDislocation（TSD）.................................................................2 3.4刃位错ThreadingEdgeDislocation（TED）...................................................................2 4要求.................................................................................................................................................2 4.1分类......................................................................................................................................2 4.2牌号......................................................................................................................................2 4.3质量等级..............................................................................................................................2 4.4几何参数..............................................................................................................................2 4.5表面取向..............................................................................................................................3 4.6表面缺陷..............................................................................................................................3 4.7微管密度..............................................................................................................................3 4.8结晶质量..............................................................................................................................4 4.9电阻率..................................................................................................................................4 4.10多型....................................................................................................................................4 4.11位错密度............................................................................................................................4 5检验方法.........................................................................................................................................5 5.1几何参数..............................................................................................................................5 5.2表面取向..............................................................................................................................5 5.3表面缺陷..............................................................................................................................5 5.4微管密度..............................................................................................................................5 5.5结晶质量..............................................................................................................................5 5.6电阻率..................................................................................................................................6 5.7多型......................................................................................................................................6 5.8位错密度....................................................................................................